Fachinformationsdienst BAUdigital

A platform for research: civil engineering, architecture and urbanism

    Corrigendum to ‘Material research on the InGaAs-emitting-layer VECSEL grown on GaAs substrate’ [Mater. Sci. Semicond. Process. 42 (2016) 283–287]

    New search for: Lin, Tao
    New search for: Sun, Ruijuan
    New search for: Sun, Hang
    New search for: Guo, Enmin
    New search for: Duan, Yupeng
    New search for: Lin, Nan
    New search for: Ma, Xiaoyu
    New search for: Wang, Yonggang

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Corrigendum to ‘Material research on the InGaAs-emitting-layer VECSEL grown on GaAs substrate’ [Mater. Sci. Semicond. Process. 42 (2016) 283–287]

    New search for: Lin, Tao
    New search for: Sun, Ruijuan
    New search for: Sun, Hang
    New search for: Guo, Enmin
    New search for: Duan, Yupeng
    New search for: Lin, Nan
    New search for: Ma, Xiaoyu
    New search for: Wang, Yonggang

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Corrigendum to ‘Material research on the InGaAs-emitting-layer VECSEL grown on GaAs substrate’ [Mater. Sci. Semicond. Process. 42 (2016) 283–287]

    New search for: Lin, Tao
    New search for: Sun, Ruijuan
    New search for: Sun, Hang
    New search for: Guo, Enmin
    New search for: Duan, Yupeng
    New search for: Lin, Nan
    New search for: Ma, Xiaoyu
    New search for: Wang, Yonggang

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    Corrigendum to ‘Material research on the InGaAs-emitting-layer VECSEL grown on GaAs substrate’ [Mater. Sci. Semicond. Process. 42 (2016) 283–287]

    Contributors:

    Lin, Tao (author) / Sun, Ruijuan (author) / Sun, Hang (author) / Guo, Enmin (author) / Duan, Yupeng (author) / Lin, Nan (author) / Ma, Xiaoyu (author) / Wang, Yonggang (author)

    Published in:

    Materials science in semiconductor processing ; 47 ; 86

    Publication date:

    2016-01-01

    Size:

    86 pages

    ISSN:

    1369-8001

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  621.38152

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

    Similar titles

    Material research on the InGaAs-emitting-layer VECSEL grown on GaAs substrate

    Lin, Tao / Sun, Ruijuan / Sun, Hang et al. | British Library Online Contents | 2016

    Corrigendum to “Synthesis, growth and characterization of AgInSe2 single crystals” [Mater. Sci. Semicond. Process. 40 (2015) 591–595]

    Karunagaran, N. / Ramasamy, P. | British Library Online Contents | 2016

    Corrigendum to “Bulk moduli of PbSxSe1−x, PbSxTe1−x and PbSexTe1−x from a thermodynamical model compared to generalized gradient approximation approach” [Mater. Sci. Semicond. Process. 43 (2016) 65–68]

    Skordas, E.S. | British Library Online Contents | 2016

    Critical layer thickness in MOCVD grown InGaAs-GaAs strained quantum wells

    Zhang, X. / Briot, O. / Gil, B. et al. | British Library Online Contents | 1995

    MBE grown InAlAs/InGaAs lattice mismatched layers for HEMT application on GaAs substrate

    Cordier, Y. / Bollaert, S. / DiPersio, J. et al. | British Library Online Contents | 1998

    Back to top