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Photoreflectance investigation of band gap renormalization and the Burstein–Moss effect in Si doped GaN grown by MOVPE
Photoreflectance investigation of band gap renormalization and the Burstein–Moss effect in Si doped GaN grown by MOVPE
Photoreflectance investigation of band gap renormalization and the Burstein–Moss effect in Si doped GaN grown by MOVPE
Bouzidi, M. (Autor:in) / Benzarti, Z. (Autor:in) / Halidou, I. (Autor:in) / Soltani, S. (Autor:in) / Chine, Z. (Autor:in) / EL Jani, B. (Autor:in)
Materials science in semiconductor processing ; 42 ; 273-276
01.01.2016
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.38152
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