Photoreflectance investigation of band gap renormalization and the Burstein–Moss effect in Si doped GaN grown by MOVPE: Fid-Bau Portal

Photoreflectance investigation of band gap renormalization and the Burstein–Moss effect in Si doped GaN grown by MOVPE

Bouzidi, M. / Benzarti, Z. / Halidou, I. / Soltani, S. / Chine, Z. / EL Jani, B.

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Photoreflectance investigation of band gap renormalization and the Burstein–Moss effect in Si doped GaN grown by MOVPE

Bouzidi, M. / Benzarti, Z. / Halidou, I. / Soltani, S. / Chine, Z. / EL Jani, B.

Photoreflectance investigation of band gap renormalization and the Burstein–Moss effect in Si doped GaN grown by MOVPE

Bouzidi, M. / Benzarti, Z. / Halidou, I. / Soltani, S. / Chine, Z. / EL Jani, B.

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Title:

Photoreflectance investigation of band gap renormalization and the Burstein–Moss effect in Si doped GaN grown by MOVPE

Contributors:

Bouzidi, M. (author) / Benzarti, Z. (author) / Halidou, I. (author) / Soltani, S. (author) / Chine, Z. (author) / EL Jani, B. (author)

Published in:

Materials science in semiconductor processing ; 42 ; 273-276

Publication date:

2016-01-01

Size:

4 pages

ISSN:

1369-8001

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.38152

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