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Thickness effect on the bipolar switching mechanism for nonvolatile resistive memory devices based on CeO2 thin films
Thickness effect on the bipolar switching mechanism for nonvolatile resistive memory devices based on CeO2 thin films
Thickness effect on the bipolar switching mechanism for nonvolatile resistive memory devices based on CeO2 thin films
Rana, Anwar Manzoor (Autor:in) / Ismail, M. (Autor:in) / Ahmed, E. (Autor:in) / Talib, I. (Autor:in) / Khan, Tahira (Autor:in) / Hussain, M. (Autor:in) / Nadeem, M.Y. (Autor:in)
Materials science in semiconductor processing ; 39 ; 211-216
01.01.2015
6 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.38152
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