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Thickness effect on the bipolar switching mechanism for nonvolatile resistive memory devices based on CeO2 thin films
Thickness effect on the bipolar switching mechanism for nonvolatile resistive memory devices based on CeO2 thin films
Thickness effect on the bipolar switching mechanism for nonvolatile resistive memory devices based on CeO2 thin films
Rana, Anwar Manzoor (author) / Ismail, M. (author) / Ahmed, E. (author) / Talib, I. (author) / Khan, Tahira (author) / Hussain, M. (author) / Nadeem, M.Y. (author)
Materials science in semiconductor processing ; 39 ; 211-216
2015-01-01
6 pages
Article (Journal)
English
DDC:
621.38152
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