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Valence band anticrossing model for GaSb1−xBix and GaP1−xBix using k.p method
Valence band anticrossing model for GaSb1−xBix and GaP1−xBix using k.p method
Valence band anticrossing model for GaSb1−xBix and GaP1−xBix using k.p method
Samajdar, D.P. (Autor:in) / Das, T.D. (Autor:in) / Dhar, S. (Autor:in)
Materials science in semiconductor processing ; 40 ; 539-542
01.01.2015
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.38152
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