Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Improving the electrical and hysteresis performance of amorphous igzo thin-film transistors using co-sputtered zirconium silicon oxide gate dielectrics
Improving the electrical and hysteresis performance of amorphous igzo thin-film transistors using co-sputtered zirconium silicon oxide gate dielectrics
Improving the electrical and hysteresis performance of amorphous igzo thin-film transistors using co-sputtered zirconium silicon oxide gate dielectrics
Hung, Chien-Hsiung (Autor:in) / Wang, Shui-Jinn (Autor:in) / Liu, Pang-Yi (Autor:in) / Wu, Chien-Hung (Autor:in) / Yan, Hao-Ping (Autor:in) / Wu, Nai-Sheng (Autor:in) / Lin, Tseng-Hsing (Autor:in)
Materials science in semiconductor processing ; 67 ; 84-91
01.01.2017
8 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.38152
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
IGZO thin film transistors with Al2O3 gate insulators fabricated at different temperatures
British Library Online Contents | 2015
|Effective Mobility Enhancement by Using Nanometer Dot Doping in Amorphous IGZO Thin-Film Transistors
British Library Online Contents | 2011
|Amorphous InGaZnO thin film transistors with sputtered silver source/drain and gate electrodes
British Library Online Contents | 2016
|Low temperature solution-processed IGZO thin-film transistors
British Library Online Contents | 2018
|Low temperature solution-processed IGZO thin-film transistors
British Library Online Contents | 2018
|