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Effective Mobility Enhancement by Using Nanometer Dot Doping in Amorphous IGZO Thin-Film Transistors
Effective Mobility Enhancement by Using Nanometer Dot Doping in Amorphous IGZO Thin-Film Transistors
Effective Mobility Enhancement by Using Nanometer Dot Doping in Amorphous IGZO Thin-Film Transistors
Zan, H. W. (Autor:in) / Tsai, W. W. (Autor:in) / Chen, C. H. (Autor:in) / Tsai, C. C. (Autor:in)
ADVANCED MATERIALS -DEERFIELD BEACH THEN WEINHEIM- ; 23 ; 4237-4242
01.01.2011
6 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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