Structure, interface abruptness and strain relaxation in self-assisted grown InAs/GaAs nanowires

Frigeri, Cesare / Scarpellini, David / Fedorov, Alexey et al. | British Library Online Contents | 2017

Compositional abruptness of wet-oxidized AlAs/GaAs interface

Takamori, T. / Takemasa, K. / Kamijoh, T. | British Library Online Contents | 1997

Reactor structure dependence of interface abruptness in GaInAs/InP and GaInP/GaAs grown by organometallic vapor phase epitaxy

Fujiwara, Y. / Nonogaki, Y. / Oga, R. et al. | British Library Online Contents | 2003

Interface abruptness in strained III-V heterostructures

Bruni, M. R. / Kaciulis, S. / Mattogno, G. et al. | British Library Online Contents | 1996

Twins and strain relaxation in zinc-blende GaAs nanowires grown on silicon

Piñero, J.C. / Araújo, D. / Pastore, C.E. et al. | British Library Online Contents | 2017