Reactor structure dependence of interface abruptness in GaInAs/InP and GaInP/GaAs grown by organometallic vapor phase epitaxy: Fid-Bau Portal

Reactor structure dependence of interface abruptness in GaInAs/InP and GaInP/GaAs grown by organometallic vapor phase epitaxy

Fujiwara, Y. / Nonogaki, Y. / Oga, R. / Koizumi, A. / Takeda, Y.

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Reactor structure dependence of interface abruptness in GaInAs/InP and GaInP/GaAs grown by organometallic vapor phase epitaxy

Fujiwara, Y. / Nonogaki, Y. / Oga, R. / Koizumi, A. / Takeda, Y.

Reactor structure dependence of interface abruptness in GaInAs/InP and GaInP/GaAs grown by organometallic vapor phase epitaxy

Fujiwara, Y. / Nonogaki, Y. / Oga, R. / Koizumi, A. / Takeda, Y.

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Titel:

Reactor structure dependence of interface abruptness in GaInAs/InP and GaInP/GaAs grown by organometallic vapor phase epitaxy

Beteiligte:

Fujiwara, Y. (Autor:in) / Nonogaki, Y. (Autor:in) / Oga, R. (Autor:in) / Koizumi, A. (Autor:in) / Takeda, Y. (Autor:in)

Erschienen in:

APPLIED SURFACE SCIENCE ; 216 ; 564-568

Erscheinungsdatum:

01.01.2003

Format / Umfang:

5 pages

ISSN:

0169-4332

Medientyp:

Aufsatz (Zeitschrift)

Format:

Sprache:

Englisch

Klassifikation:

DDC: 621.35

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Effects of growth sequence on atomic level interfacial structures and characteristics of GaInP/GaAs/GaInP double heterostructures grown by low-pressure organometallic vapor phase epitaxy

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Structure, interface abruptness and strain relaxation in self-assisted grown InAs/GaAs nanowires

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