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Metal ion formed conductive filaments by redox process induced nonvolatile resistive switching memories in MoS2 film
Metal ion formed conductive filaments by redox process induced nonvolatile resistive switching memories in MoS2 film
Metal ion formed conductive filaments by redox process induced nonvolatile resistive switching memories in MoS2 film
Xia, Yudong (Autor:in) / Sun, Bai (Autor:in) / Wang, Hongyan (Autor:in) / Zhou, Guangdong (Autor:in) / Kan, Xiang (Autor:in) / Zhang, Yong (Autor:in) / Zhao, Yong (Autor:in)
Applied surface science ; 426 ; 812-816
01.01.2017
5 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.44
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