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    Metal ion formed conductive filaments by redox process induced nonvolatile resistive switching memories in MoS2 film

    New search for: Xia, Yudong
    New search for: Sun, Bai
    New search for: Wang, Hongyan
    New search for: Zhou, Guangdong
    New search for: Kan, Xiang
    New search for: Zhang, Yong
    New search for: Zhao, Yong

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    Metal ion formed conductive filaments by redox process induced nonvolatile resistive switching memories in MoS2 film

    New search for: Xia, Yudong
    New search for: Sun, Bai
    New search for: Wang, Hongyan
    New search for: Zhou, Guangdong
    New search for: Kan, Xiang
    New search for: Zhang, Yong
    New search for: Zhao, Yong

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Metal ion formed conductive filaments by redox process induced nonvolatile resistive switching memories in MoS2 film

    New search for: Xia, Yudong
    New search for: Sun, Bai
    New search for: Wang, Hongyan
    New search for: Zhou, Guangdong
    New search for: Kan, Xiang
    New search for: Zhang, Yong
    New search for: Zhao, Yong

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

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    Document information
    Title:

    Metal ion formed conductive filaments by redox process induced nonvolatile resistive switching memories in MoS2 film

    Contributors:

    Xia, Yudong (author) / Sun, Bai (author) / Wang, Hongyan (author) / Zhou, Guangdong (author) / Kan, Xiang (author) / Zhang, Yong (author) / Zhao, Yong (author)

    Published in:

    Applied surface science ; 426 ; 812-816

    Publication date:

    2017-01-01

    Size:

    5 pages

    ISSN:

    0169-4332

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.44

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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