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Improved photoelectric properties of p-µc-Si:H/p-a-SiOx:H window layer deposited by RF-PECVD
Improved photoelectric properties of p-µc-Si:H/p-a-SiOx:H window layer deposited by RF-PECVD
Improved photoelectric properties of p-µc-Si:H/p-a-SiOx:H window layer deposited by RF-PECVD
Qu, Xingling (Autor:in) / Jin, Jing (Autor:in) / Jin, Qi (Autor:in) / Huang, Lu (Autor:in) / Zhu, Wenqing (Autor:in) / Shi, Weimin (Autor:in)
Materials science in semiconductor processing ; 71 ; 54-60
01.01.2017
7 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.38152
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Improved photoelectric properties of p-µc-Si:H/p-a-SiOx:H window layer deposited by RF-PECVD
| British Library Online Contents | 2017
Improved photoelectric properties of p-µc-Si:H/p-a-SiOx:H window layer deposited by RF-PECVD
| British Library Online Contents | 2017
Temperature independent Er3+ photoluminescence lifetime in a-Si:H and a-SiOx:H
| British Library Online Contents | 2003
Annealing effects on electrical and optical properties of a-Si:H layer deposited by PECVD
| British Library Online Contents | 2015
Annealing effects on electrical and optical properties of a-Si:H layer deposited by PECVD
| British Library Online Contents | 2015