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    Improved photoelectric properties of p-µc-Si:H/p-a-SiOx:H window layer deposited by RF-PECVD

    New search for: Qu, Xingling
    New search for: Jin, Jing
    New search for: Jin, Qi
    New search for: Huang, Lu
    New search for: Zhu, Wenqing
    New search for: Shi, Weimin

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    Improved photoelectric properties of p-µc-Si:H/p-a-SiOx:H window layer deposited by RF-PECVD

    New search for: Qu, Xingling
    New search for: Jin, Jing
    New search for: Jin, Qi
    New search for: Huang, Lu
    New search for: Zhu, Wenqing
    New search for: Shi, Weimin

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Improved photoelectric properties of p-µc-Si:H/p-a-SiOx:H window layer deposited by RF-PECVD

    New search for: Qu, Xingling
    New search for: Jin, Jing
    New search for: Jin, Qi
    New search for: Huang, Lu
    New search for: Zhu, Wenqing
    New search for: Shi, Weimin

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    Improved photoelectric properties of p-µc-Si:H/p-a-SiOx:H window layer deposited by RF-PECVD

    Contributors:

    Qu, Xingling (author) / Jin, Jing (author) / Jin, Qi (author) / Huang, Lu (author) / Zhu, Wenqing (author) / Shi, Weimin (author)

    Published in:

    Materials science in semiconductor processing ; 71 ; 54-60

    Publication date:

    2017-01-01

    Size:

    7 pages

    ISSN:

    1369-8001

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  621.38152

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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