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Atomic nature of the Schottky barrier height formation of the Ag/GaAs(001)-2×4 interface: An in-situ synchrotron radiation photoemission study
Atomic nature of the Schottky barrier height formation of the Ag/GaAs(001)-2×4 interface: An in-situ synchrotron radiation photoemission study
Atomic nature of the Schottky barrier height formation of the Ag/GaAs(001)-2×4 interface: An in-situ synchrotron radiation photoemission study
Cheng, Chiu-Ping (Autor:in) / Chen, Wan-Sin (Autor:in) / Lin, Keng-Yung (Autor:in) / Wei, Guo-Jhen (Autor:in) / Cheng, Yi-Ting (Autor:in) / Lin, Yen-Hsun (Autor:in) / Wan, Hsien-Wen (Autor:in) / Pi, Tun-Wen (Autor:in) / Tung, Raymond T. (Autor:in) / Kwo, Jueinai (Autor:in)
Applied surface science ; 393 ; 294-298
01.01.2017
5 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.44
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