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In-line monitoring of strain distribution using high resolution X-ray Reciprocal space mapping into 20nm SiGe pMOS
In-line monitoring of strain distribution using high resolution X-ray Reciprocal space mapping into 20nm SiGe pMOS
In-line monitoring of strain distribution using high resolution X-ray Reciprocal space mapping into 20nm SiGe pMOS
Durand, Aurèle (Autor:in) / Kaufling, Melissa (Autor:in) / Le-Cunff, Delphine (Autor:in) / Rouchon, Denis (Autor:in) / Gergaud, Patrice (Autor:in)
Materials science in semiconductor processing ; 70 ; 99-104
01.01.2017
6 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.38152
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