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In-line monitoring of strain distribution using high resolution X-ray Reciprocal space mapping into 20nm SiGe pMOS
In-line monitoring of strain distribution using high resolution X-ray Reciprocal space mapping into 20nm SiGe pMOS
In-line monitoring of strain distribution using high resolution X-ray Reciprocal space mapping into 20nm SiGe pMOS
Durand, Aurèle (author) / Kaufling, Melissa (author) / Le-Cunff, Delphine (author) / Rouchon, Denis (author) / Gergaud, Patrice (author)
Materials science in semiconductor processing ; 70 ; 99-104
2017-01-01
6 pages
Article (Journal)
English
DDC:
621.38152
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