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Improved Schottky barrier characteristics for AlInN/GaN diodes by oxygen plasma treatment
Improved Schottky barrier characteristics for AlInN/GaN diodes by oxygen plasma treatment
Improved Schottky barrier characteristics for AlInN/GaN diodes by oxygen plasma treatment
Yang, Lianhong (Autor:in) / Zhang, Baohua (Autor:in) / Li, Yanqing (Autor:in) / Chen, Dunjun (Autor:in)
Materials science in semiconductor processing ; 74 ; 42-45
01.01.2018
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.38152
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