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Band alignment of SiO2/(AlxGa1-x)2O3 (0≤x≤0.49) determined by X-ray photoelectron spectroscopy
Band alignment of SiO2/(AlxGa1-x)2O3 (0≤x≤0.49) determined by X-ray photoelectron spectroscopy
Band alignment of SiO2/(AlxGa1-x)2O3 (0≤x≤0.49) determined by X-ray photoelectron spectroscopy
Feng, Zhaoqing (Autor:in) / Feng, Qian (Autor:in) / Zhang, Jincheng (Autor:in) / Li, Xiang (Autor:in) / Li, Fuguo (Autor:in) / Huang, Lu (Autor:in) / Chen, Hong-Yan (Autor:in) / Lu, Hong-Liang (Autor:in) / Hao, Yue (Autor:in)
Applied surface science ; 434 ; 440-444
01.01.2018
5 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.44
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Band alignment of SiO2/(AlxGa1-x)2O3 (0≤x≤0.49) determined by X-ray photoelectron spectroscopy
British Library Online Contents | 2018
|Band alignment of SiO2/(AlxGa1-x)2O3 (0≤x≤0.49) determined by X-ray photoelectron spectroscopy
British Library Online Contents | 2018
|Band alignment of SiO2/(AlxGa1-x)2O3 (0≤x≤0.49) determined by X-ray photoelectron spectroscopy
British Library Online Contents | 2018
|Band alignment of SiO2/(AlxGa1-x)2O3 (0≤x≤0.49) determined by X-ray photoelectron spectroscopy
British Library Online Contents | 2018
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