Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Influence of UDMHy on GaAs (0 0 1) surface reconstruction before and during growth of Ga(NAs) by MOVPE
Influence of UDMHy on GaAs (0 0 1) surface reconstruction before and during growth of Ga(NAs) by MOVPE
Influence of UDMHy on GaAs (0 0 1) surface reconstruction before and during growth of Ga(NAs) by MOVPE
Maßmeyer, O. (Autor:in) / Sterzer, E. (Autor:in) / Nattermann, L. (Autor:in) / Stolz, W. (Autor:in) / Volz, K. (Autor:in)
Applied surface science ; 458 ; 512-516
01.01.2018
5 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.44
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Diffusion of Ga on the GaAs (113) surface in the [110] direction during MOVPE growth
British Library Online Contents | 2000
|Real-time measurement of rocking curves during MOVPE growth of GaxIn1-xP/GaAs
British Library Online Contents | 2003
|Improvements in the heteroepitaxial growth of GaAs on Si by MOVPE
British Library Online Contents | 1993
|Surface morphology and Raman scattering in GaAs/InAs(111) heterostructures grown by MOVPE
British Library Online Contents | 1997
|Electrical Characterization of MOVPE Grown Au/ZnSe/GaAs Heterostructures
British Library Online Contents | 1995
|