Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Influence of oxygen vacancies in ALD HfO2-x thin films on non-volatile resistive switching phenomena with a Ti/HfO2-x/Pt structure
Influence of oxygen vacancies in ALD HfO2-x thin films on non-volatile resistive switching phenomena with a Ti/HfO2-x/Pt structure
Influence of oxygen vacancies in ALD HfO2-x thin films on non-volatile resistive switching phenomena with a Ti/HfO2-x/Pt structure
Sokolov, Andrey Sergeevich (Autor:in) / Jeon, Yu-Rim (Autor:in) / Kim, Sohyeon (Autor:in) / Ku, Boncheol (Autor:in) / Lim, Donghwan (Autor:in) / Han, Hoonhee (Autor:in) / Chae, Myeong Gyoon (Autor:in) / Lee, Jaeho (Autor:in) / Ha, Beom Gil (Autor:in) / Choi, Changhwan (Autor:in)
Applied surface science ; 434 ; 822-830
01.01.2018
9 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.44
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| British Library Online Contents | 2018
| British Library Online Contents | 2018
| British Library Online Contents | 2018
| British Library Online Contents | 2018
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