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A platform for research: civil engineering, architecture and urbanism
Influence of oxygen vacancies in ALD HfO2-x thin films on non-volatile resistive switching phenomena with a Ti/HfO2-x/Pt structure
Influence of oxygen vacancies in ALD HfO2-x thin films on non-volatile resistive switching phenomena with a Ti/HfO2-x/Pt structure
Influence of oxygen vacancies in ALD HfO2-x thin films on non-volatile resistive switching phenomena with a Ti/HfO2-x/Pt structure
Sokolov, Andrey Sergeevich (author) / Jeon, Yu-Rim (author) / Kim, Sohyeon (author) / Ku, Boncheol (author) / Lim, Donghwan (author) / Han, Hoonhee (author) / Chae, Myeong Gyoon (author) / Lee, Jaeho (author) / Ha, Beom Gil (author) / Choi, Changhwan (author)
Applied surface science ; 434 ; 822-830
2018-01-01
9 pages
Article (Journal)
English
DDC:
620.44
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| British Library Online Contents | 2018
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