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Temperature dependent study of basal plane stacking faults in Ag:ZnO nanorods by Raman and photoluminescence spectroscopy
Temperature dependent study of basal plane stacking faults in Ag:ZnO nanorods by Raman and photoluminescence spectroscopy
Temperature dependent study of basal plane stacking faults in Ag:ZnO nanorods by Raman and photoluminescence spectroscopy
Khranovskyy, Volodymyr (Autor:in) / Sendova, Mariana (Autor:in) / Hosterman, Brian (Autor:in) / McGinnis, Navin (Autor:in) / Shtepliuk, Ivan (Autor:in) / Yakimova, Rositsa (Autor:in)
Materials science in semiconductor processing ; 69 ; 62-67
01.01.2017
6 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.38152
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