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HREM study of basal stacking faults in GaN layers grown over sapphire substrate
HREM study of basal stacking faults in GaN layers grown over sapphire substrate
HREM study of basal stacking faults in GaN layers grown over sapphire substrate
Potin, V. (Autor:in) / Gil, B. (Autor:in) / Charar, S. (Autor:in) / Ruterana, P. (Autor:in) / Nouet, G. (Autor:in)
MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 82 ; 114 - 116
01.01.2001
3 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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