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Stochastic model and simulation of growth and coalescence of spontaneously formed GaN nanowires in molecular beam epitaxy
Stochastic model and simulation of growth and coalescence of spontaneously formed GaN nanowires in molecular beam epitaxy
Stochastic model and simulation of growth and coalescence of spontaneously formed GaN nanowires in molecular beam epitaxy
Sabelfeld, K.K. (Autor:in) / Kablukova, E.G. (Autor:in)
Computational materials science ; 141 ; 341-352
01.01.2018
12 pages
Aufsatz (Zeitschrift)
Unbekannt
DDC:
620.1
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