A platform for research: civil engineering, architecture and urbanism
Stochastic model and simulation of growth and coalescence of spontaneously formed GaN nanowires in molecular beam epitaxy
Stochastic model and simulation of growth and coalescence of spontaneously formed GaN nanowires in molecular beam epitaxy
Stochastic model and simulation of growth and coalescence of spontaneously formed GaN nanowires in molecular beam epitaxy
Sabelfeld, K.K. (author) / Kablukova, E.G. (author)
Computational materials science ; 141 ; 341-352
2018-01-01
12 pages
Article (Journal)
Unknown
DDC:
620.1
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
British Library Online Contents | 2018
|British Library Online Contents | 2018
|Stochastic simulation of nanowire growth in plasma-assisted molecular beam epitaxy
British Library Online Contents | 2016
|Stochastic simulation of nanowire growth in plasma-assisted molecular beam epitaxy
British Library Online Contents | 2016
|Stochastic simulation of nanowire growth in plasma-assisted molecular beam epitaxy
British Library Online Contents | 2016
|