Long-term stability of photodetectors based on graphene field-effect transistors encapsulated with Si3N4 layers

Su, Fang / Zhang, Zhaohao / Li, Shasha et al. | British Library Online Contents | 2018

Enhancement of long-term stability of pentacene thin-film transistors encapsulated with transparent SnO2

Kim, W. J. / Koo, W. H. / Jo, S. J. et al. | British Library Online Contents | 2005

Mid-Infrared HgTe/As2S3 Field Effect Transistors and Photodetectors

Lhuillier, E. / Keuleyan, S. / Zolotavin, P. et al. | British Library Online Contents | 2013

GaN/AlGaN Heterostructure Devices: Photodetectors and Field-Effect Transistors

Shur, M. S. / Khan, M. A. | British Library Online Contents | 1997

Material Development in the Si3N4 System Using Glass Encapsulated HIP'ing: I

Corbin, N.D. | Online Contents | 1993