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General rules of the sub-band gaps in group-IV (Si, Ge, and Sn)-doped I-III-VI2-type chalcopyrite compounds for intermediate band solar cell: A first-principles study
General rules of the sub-band gaps in group-IV (Si, Ge, and Sn)-doped I-III-VI2-type chalcopyrite compounds for intermediate band solar cell: A first-principles study
General rules of the sub-band gaps in group-IV (Si, Ge, and Sn)-doped I-III-VI2-type chalcopyrite compounds for intermediate band solar cell: A first-principles study
Huang, Dan (Autor:in) / Jiang, Jing-Wen (Autor:in) / Guo, Jin (Autor:in) / Zhao, Yu-Jun (Autor:in) / Chen, Rongzhen (Autor:in) / Persson, Clas (Autor:in)
Materials science & engineering B ; 236 ; 147-152
01.01.2018
6 pages
Aufsatz (Zeitschrift)
Unbekannt
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