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General rules of the sub-band gaps in group-IV (Si, Ge, and Sn)-doped I-III-VI2-type chalcopyrite compounds for intermediate band solar cell: A first-principles study
General rules of the sub-band gaps in group-IV (Si, Ge, and Sn)-doped I-III-VI2-type chalcopyrite compounds for intermediate band solar cell: A first-principles study
General rules of the sub-band gaps in group-IV (Si, Ge, and Sn)-doped I-III-VI2-type chalcopyrite compounds for intermediate band solar cell: A first-principles study
Huang, Dan (author) / Jiang, Jing-Wen (author) / Guo, Jin (author) / Zhao, Yu-Jun (author) / Chen, Rongzhen (author) / Persson, Clas (author)
Materials science & engineering B ; 236 ; 147-152
2018-01-01
6 pages
Article (Journal)
Unknown
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