In-doped As2Se3 thin films studied by Raman and X-ray photoelectron spectroscopies: Fid-Bau Portal

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In-doped As2Se3 thin films studied by Raman and X-ray photoelectron spectroscopies

Azhniuk, Yuriy / Dzhagan, Volodymyr / Solonenko, Dmytro / Loya, Vasyl / Grytsyshche, Iaroslav / Lopushansky, Vasyl / Gomonnai, Alexander / Zahn, Dietrich R.T.

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In-doped As2Se3 thin films studied by Raman and X-ray photoelectron spectroscopies

Azhniuk, Yuriy / Dzhagan, Volodymyr / Solonenko, Dmytro / Loya, Vasyl / Grytsyshche, Iaroslav / Lopushansky, Vasyl / Gomonnai, Alexander / Zahn, Dietrich R.T.

In-doped As2Se3 thin films studied by Raman and X-ray photoelectron spectroscopies

Azhniuk, Yuriy / Dzhagan, Volodymyr / Solonenko, Dmytro / Loya, Vasyl / Grytsyshche, Iaroslav / Lopushansky, Vasyl / Gomonnai, Alexander / Zahn, Dietrich R.T.

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Titel:

In-doped As2Se3 thin films studied by Raman and X-ray photoelectron spectroscopies

Beteiligte:

Azhniuk, Yuriy (Autor:in) / Dzhagan, Volodymyr (Autor:in) / Solonenko, Dmytro (Autor:in) / Loya, Vasyl (Autor:in) / Grytsyshche, Iaroslav (Autor:in) / Lopushansky, Vasyl (Autor:in) / Gomonnai, Alexander (Autor:in) / Zahn, Dietrich R.T. (Autor:in)

Erschienen in:

Applied surface science ; 471 ; 943-949

Erscheinungsdatum:

01.01.2019

Format / Umfang:

7 pages

ISSN:

Medientyp:

Aufsatz (Zeitschrift)

Format:

Print

Sprache:

Englisch

Klassifikation:

© Metadata Copyright the British Library Board and other contributors. All rights reserved.

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