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Low-voltage operating solution-processed CdS thin-film transistor with Ca2Nb3O10 nanosheets deposited using Langmuir–Blodgett method for a gate insulator
Low-voltage operating solution-processed CdS thin-film transistor with Ca2Nb3O10 nanosheets deposited using Langmuir–Blodgett method for a gate insulator
Low-voltage operating solution-processed CdS thin-film transistor with Ca2Nb3O10 nanosheets deposited using Langmuir–Blodgett method for a gate insulator
Kang, Leeseung (Autor:in) / An, HyeLan (Autor:in) / Jung, Seungmin (Autor:in) / Kim, Seyul (Autor:in) / Nahm, Sahn (Autor:in) / Kim, Dae-guen (Autor:in) / Lee, Chan Gi (Autor:in)
Applied surface science ; 476 ; 374-377
01.01.2019
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.44
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