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Low-voltage operating solution-processed CdS thin-film transistor with Ca2Nb3O10 nanosheets deposited using Langmuir–Blodgett method for a gate insulator
Low-voltage operating solution-processed CdS thin-film transistor with Ca2Nb3O10 nanosheets deposited using Langmuir–Blodgett method for a gate insulator
Low-voltage operating solution-processed CdS thin-film transistor with Ca2Nb3O10 nanosheets deposited using Langmuir–Blodgett method for a gate insulator
Kang, Leeseung (author) / An, HyeLan (author) / Jung, Seungmin (author) / Kim, Seyul (author) / Nahm, Sahn (author) / Kim, Dae-guen (author) / Lee, Chan Gi (author)
Applied surface science ; 476 ; 374-377
2019-01-01
4 pages
Article (Journal)
English
DDC:
620.44
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