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Electronic and atomic structure studies of tin oxide layers using X-ray absorption near edge structure spectroscopy data modelling

Manyakin, M.D. / Kurganskii, S.I. / Dubrovskii, O.I. / Chuvenkova, O.A. / Domashevskaya, E.P. / Ryabtsev, S.V. / Ovsyannikov, R. / Parinova, E.V. / Sivakov, V. / Turishchev, S. Yu.

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Electronic and atomic structure studies of tin oxide layers using X-ray absorption near edge structure spectroscopy data modelling

Manyakin, M.D. / Kurganskii, S.I. / Dubrovskii, O.I. / Chuvenkova, O.A. / Domashevskaya, E.P. / Ryabtsev, S.V. / Ovsyannikov, R. / Parinova, E.V. / Sivakov, V. / Turishchev, S. Yu.

Electronic and atomic structure studies of tin oxide layers using X-ray absorption near edge structure spectroscopy data modelling

Manyakin, M.D. / Kurganskii, S.I. / Dubrovskii, O.I. / Chuvenkova, O.A. / Domashevskaya, E.P. / Ryabtsev, S.V. / Ovsyannikov, R. / Parinova, E.V. / Sivakov, V. / Turishchev, S. Yu.

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Titel:

Electronic and atomic structure studies of tin oxide layers using X-ray absorption near edge structure spectroscopy data modelling

Beteiligte:

Manyakin, M.D. (Autor:in) / Kurganskii, S.I. (Autor:in) / Dubrovskii, O.I. (Autor:in) / Chuvenkova, O.A. (Autor:in) / Domashevskaya, E.P. (Autor:in) / Ryabtsev, S.V. (Autor:in) / Ovsyannikov, R. (Autor:in) / Parinova, E.V. (Autor:in) / Sivakov, V. (Autor:in) / Turishchev, S. Yu. (Autor:in)

Erschienen in:

Materials science in semiconductor processing ; 99 ; 28-33

Erscheinungsdatum:

01.01.2019

Format / Umfang:

6 pages

ISSN:

Medientyp:

Aufsatz (Zeitschrift)

Format:

Print

Sprache:

Englisch

Klassifikation:

© Metadata Copyright the British Library Board and other contributors. All rights reserved.

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