Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Optimizing emitter-buffer layer stack thickness for p-type silicon heterojunction solar cells
p-type silicon heterojunction solar cells are investigated in terms of doping concentration of emitter a-Si:H(n) layer and thickness of emitter-intrinsic buffer a-Si:H(n/i) layers. Control of doping concentration of the amorphous layer is essential to gain sufficient conductivity and junction potential while avoiding an increase in defect density of the a-Si:H(n) layer. Inserting a-Si:H(i) provides high passivation quality by reducing a-Si:H/c-Si interface recombination and leads to a higher open circuit voltage. Properties and thicknesses of both a-Si:H(n) and a-Si:H(i) have a significant role on the performance of silicon heterojunction cell. In this paper, emitter a-Si:H(n) and buffer a-Si:H(i) layers thicknesses are optimized at the optimum gas phase doping concentration in order to obtain high efficiencies.
Optimizing emitter-buffer layer stack thickness for p-type silicon heterojunction solar cells
p-type silicon heterojunction solar cells are investigated in terms of doping concentration of emitter a-Si:H(n) layer and thickness of emitter-intrinsic buffer a-Si:H(n/i) layers. Control of doping concentration of the amorphous layer is essential to gain sufficient conductivity and junction potential while avoiding an increase in defect density of the a-Si:H(n) layer. Inserting a-Si:H(i) provides high passivation quality by reducing a-Si:H/c-Si interface recombination and leads to a higher open circuit voltage. Properties and thicknesses of both a-Si:H(n) and a-Si:H(i) have a significant role on the performance of silicon heterojunction cell. In this paper, emitter a-Si:H(n) and buffer a-Si:H(i) layers thicknesses are optimized at the optimum gas phase doping concentration in order to obtain high efficiencies.
Optimizing emitter-buffer layer stack thickness for p-type silicon heterojunction solar cells
Deniz Eygi, Zeynep (Autor:in) / Das, Ujjwal (Autor:in) / Hegedus, Steven (Autor:in) / Birkmire, Robert (Autor:in)
Journal of Renewable and Sustainable Energy ; 5 ; 013117-
01.01.2013
9 pages
Aufsatz (Zeitschrift)
Elektronische Ressource
Englisch
British Library Online Contents | 2019
|British Library Online Contents | 2014
|British Library Online Contents | 2014
|Buffer layer of antimony doped tin disulphide thin films for heterojunction solar cells
British Library Online Contents | 2015
|British Library Online Contents | 2014
|