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    Optimizing emitter-buffer layer stack thickness for p-type silicon heterojunction solar cells

    New search for: Deniz Eygi, Zeynep
    New search for: Das, Ujjwal
    New search for: Hegedus, Steven
    New search for: Birkmire, Robert

    p-type silicon heterojunction solar cells are investigated in terms of doping concentration of emitter a-Si:H(n) layer and thickness of emitter-intrinsic buffer a-Si:H(n/i) layers. Control of doping concentration of the amorphous layer is essential to gain sufficient conductivity and junction potential while avoiding an increase in defect density of the a-Si:H(n) layer. Inserting a-Si:H(i) provides high passivation quality by reducing a-Si:H/c-Si interface recombination and leads to a higher open circuit voltage. Properties and thicknesses of both a-Si:H(n) and a-Si:H(i) have a significant role on the performance of silicon heterojunction cell. In this paper, emitter a-Si:H(n) and buffer a-Si:H(i) layers thicknesses are optimized at the optimum gas phase doping concentration in order to obtain high efficiencies.

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    Optimizing emitter-buffer layer stack thickness for p-type silicon heterojunction solar cells

    New search for: Deniz Eygi, Zeynep
    New search for: Das, Ujjwal
    New search for: Hegedus, Steven
    New search for: Birkmire, Robert

    p-type silicon heterojunction solar cells are investigated in terms of doping concentration of emitter a-Si:H(n) layer and thickness of emitter-intrinsic buffer a-Si:H(n/i) layers. Control of doping concentration of the amorphous layer is essential to gain sufficient conductivity and junction potential while avoiding an increase in defect density of the a-Si:H(n) layer. Inserting a-Si:H(i) provides high passivation quality by reducing a-Si:H/c-Si interface recombination and leads to a higher open circuit voltage. Properties and thicknesses of both a-Si:H(n) and a-Si:H(i) have a significant role on the performance of silicon heterojunction cell. In this paper, emitter a-Si:H(n) and buffer a-Si:H(i) layers thicknesses are optimized at the optimum gas phase doping concentration in order to obtain high efficiencies.

    Access

    Check access
    Check availability in my library
    Order at Subito €

    Optimizing emitter-buffer layer stack thickness for p-type silicon heterojunction solar cells

    New search for: Deniz Eygi, Zeynep
    New search for: Das, Ujjwal
    New search for: Hegedus, Steven
    New search for: Birkmire, Robert

    p-type silicon heterojunction solar cells are investigated in terms of doping concentration of emitter a-Si:H(n) layer and thickness of emitter-intrinsic buffer a-Si:H(n/i) layers. Control of doping concentration of the amorphous layer is essential to gain sufficient conductivity and junction potential while avoiding an increase in defect density of the a-Si:H(n) layer. Inserting a-Si:H(i) provides high passivation quality by reducing a-Si:H/c-Si interface recombination and leads to a higher open circuit voltage. Properties and thicknesses of both a-Si:H(n) and a-Si:H(i) have a significant role on the performance of silicon heterojunction cell. In this paper, emitter a-Si:H(n) and buffer a-Si:H(i) layers thicknesses are optimized at the optimum gas phase doping concentration in order to obtain high efficiencies.

    Access

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    Title:

    Optimizing emitter-buffer layer stack thickness for p-type silicon heterojunction solar cells

    Contributors:

    Deniz Eygi, Zeynep (author) / Das, Ujjwal (author) / Hegedus, Steven (author) / Birkmire, Robert (author)

    Published in:

    Journal of Renewable and Sustainable Energy ; 5 ; 013117-

    Publication date:

    2013-01-01

    Size:

    9 pages

    ISSN:

    1941-7012

    DOI:

    https://doi.org/10.1063/1.4792510

    Type of media:

    Article (Journal)

    Type of material:

    Electronic Resource

    Language:

    English

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