SiC as a core-edge integrated wall solution in DIII-D: Fid-Bau Portal

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SiC as a core-edge integrated wall solution in DIII-D

S. Zamperini / T. Abrams / J. Nichols / E. Unterberg / A. Lasa / P. Stangeby / S. Bringuier / D. Rudakov / J.D. Elder

Silicon carbide (SiC) is a promising material for use in a fusion reactor due to its low hydrogenic diffusivity, high temperature strength and resilience under neutron irradiation [1,2]. To assess SiC as a main wall material in DIII-D, simulations with TRIM.SP and DIVIMP are performed on a well-diagnosed L-mode discharge. The effective charge, Zeff, across the separatrix is used as a figure of merit in comparing SiC to the current graphite walls. It is found that SiC is expected to reduce Zeff, potentially by as much as ∼50 %. It is discussed how SiC may be expected to “self-condition” and create wall conditions similar to siliconization, further lowering Zeff due to efficient oxygen gettering. The potential benefits are reviewed and a path towards SiC walls in DIII-D is presented.

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SiC as a core-edge integrated wall solution in DIII-D

S. Zamperini / T. Abrams / J. Nichols / E. Unterberg / A. Lasa / P. Stangeby / S. Bringuier / D. Rudakov / J.D. Elder

Silicon carbide (SiC) is a promising material for use in a fusion reactor due to its low hydrogenic diffusivity, high temperature strength and resilience under neutron irradiation [1,2]. To assess SiC as a main wall material in DIII-D, simulations with TRIM.SP and DIVIMP are performed on a well-diagnosed L-mode discharge. The effective charge, Zeff, across the separatrix is used as a figure of merit in comparing SiC to the current graphite walls. It is found that SiC is expected to reduce Zeff, potentially by as much as ∼50 %. It is discussed how SiC may be expected to “self-condition” and create wall conditions similar to siliconization, further lowering Zeff due to efficient oxygen gettering. The potential benefits are reviewed and a path towards SiC walls in DIII-D is presented.

SiC as a core-edge integrated wall solution in DIII-D

S. Zamperini / T. Abrams / J. Nichols / E. Unterberg / A. Lasa / P. Stangeby / S. Bringuier / D. Rudakov / J.D. Elder

Silicon carbide (SiC) is a promising material for use in a fusion reactor due to its low hydrogenic diffusivity, high temperature strength and resilience under neutron irradiation [1,2]. To assess SiC as a main wall material in DIII-D, simulations with TRIM.SP and DIVIMP are performed on a well-diagnosed L-mode discharge. The effective charge, Zeff, across the separatrix is used as a figure of merit in comparing SiC to the current graphite walls. It is found that SiC is expected to reduce Zeff, potentially by as much as ∼50 %. It is discussed how SiC may be expected to “self-condition” and create wall conditions similar to siliconization, further lowering Zeff due to efficient oxygen gettering. The potential benefits are reviewed and a path towards SiC walls in DIII-D is presented.

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Titel:

SiC as a core-edge integrated wall solution in DIII-D

Beteiligte:

S. Zamperini (Autor:in) / T. Abrams (Autor:in) / J. Nichols (Autor:in) / E. Unterberg (Autor:in) / A. Lasa (Autor:in) / P. Stangeby (Autor:in) / S. Bringuier (Autor:in) / D. Rudakov (Autor:in) / J.D. Elder (Autor:in)

Erschienen in:

Nuclear Materials and Energy, Vol 37, Iss , Pp 101535- (2023)

Erscheinungsdatum:

2023

ISSN:

DOI:

https://doi.org/10.1016/j.nme.2023.101535

Medientyp:

Aufsatz (Zeitschrift)

Format:

Elektronische Ressource

Sprache:

Unbekannt

Schlagwörter:

nuclear fusion , DIII-D , impurity transport , silicon carbide , wall conditioning , DIVIMP , Nuclear engineering. Atomic power , TK9001-9401

Metadata by DOAJ is licensed under CC BY-SA 1.0

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