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An experimental comparison of interface trap density in hafnium oxide-based FeFETs
In recent years, there has been significant progress in the development of high-κ materials in the semiconductor industry. Given that the contact between the channel and the electrode has a crucial impact on reliability, the selection of electrode materials and their deposition technology is an area that requires extensive research. Additionally, interface trap density has long played a critical role in determining the reliability of field-effect transistors (FETs). Therefore, this paper presents the results of interface trap density in high-κ FETs obtained using 2-level and 3-level charge pumping methods. Measurements were conducted on a 10 nm oxide thickness n-doped silicon substrate using native k materials such as silicon and zirconium-doped hafnium oxide. The results demonstrate that chlorine-based HfO2 oxide with zirconium doping exhibits the lowest interface defects.
An experimental comparison of interface trap density in hafnium oxide-based FeFETs
In recent years, there has been significant progress in the development of high-κ materials in the semiconductor industry. Given that the contact between the channel and the electrode has a crucial impact on reliability, the selection of electrode materials and their deposition technology is an area that requires extensive research. Additionally, interface trap density has long played a critical role in determining the reliability of field-effect transistors (FETs). Therefore, this paper presents the results of interface trap density in high-κ FETs obtained using 2-level and 3-level charge pumping methods. Measurements were conducted on a 10 nm oxide thickness n-doped silicon substrate using native k materials such as silicon and zirconium-doped hafnium oxide. The results demonstrate that chlorine-based HfO2 oxide with zirconium doping exhibits the lowest interface defects.
An experimental comparison of interface trap density in hafnium oxide-based FeFETs
Chaiwon Woo (Autor:in) / Yannick Raffel (Autor:in) / Ricardo Olivo (Autor:in) / Konrad Seidel (Autor:in) / Aleksander Gurlo (Autor:in)
2023
Aufsatz (Zeitschrift)
Elektronische Ressource
Unbekannt
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