Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Lifetime importance in measuring noise of generation-recombination in semiconductors
Effect of mean lifetime of carriers in conduction and valence bands on noise spectrum of generation-recombination is investigated; electron trapping cross sections by donors and acceptors at room temperature were measured.
Lifetime importance in measuring noise of generation-recombination in semiconductors
Effect of mean lifetime of carriers in conduction and valence bands on noise spectrum of generation-recombination is investigated; electron trapping cross sections by donors and acceptors at room temperature were measured.
Lifetime importance in measuring noise of generation-recombination in semiconductors
Sur la duree de vie intervenant dans les mesures du bruit de generation-recombinaison dans les semi-conducteurs
Gouskov, L. (Autor:in) / Nougier, J.P. (Autor:in) / Savelli, M. (Autor:in)
1965
4 pages
Aufsatz (Zeitschrift)
Französisch
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