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Lifetime importance in measuring noise of generation-recombination in semiconductors
Effect of mean lifetime of carriers in conduction and valence bands on noise spectrum of generation-recombination is investigated; electron trapping cross sections by donors and acceptors at room temperature were measured.
Lifetime importance in measuring noise of generation-recombination in semiconductors
Effect of mean lifetime of carriers in conduction and valence bands on noise spectrum of generation-recombination is investigated; electron trapping cross sections by donors and acceptors at room temperature were measured.
Lifetime importance in measuring noise of generation-recombination in semiconductors
Sur la duree de vie intervenant dans les mesures du bruit de generation-recombinaison dans les semi-conducteurs
Gouskov, L. (author) / Nougier, J.P. (author) / Savelli, M. (author)
1965
4 pages
Article (Journal)
French
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