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Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Effect of sputtering input powers on CoSi2 thin films prepared by magnetron sputtering
AbstractCoSi2 thin films were prepared by radio frequency magnetron sputtering using CoSi2 alloy target. Effect of sputtering input powers on characteristics of CoSi2 thin films was researched by X-ray diffraction (XRD), transparent electron microscope (TEM), energy dispersive X-ray analysis and four points probe, etc. It was shown that the deposition rate increased lineally, the selective sputtering of silicon was strengthened, the (111) texture increased, and the resistivity decreased when the input powers were increased.
Effect of sputtering input powers on CoSi2 thin films prepared by magnetron sputtering
AbstractCoSi2 thin films were prepared by radio frequency magnetron sputtering using CoSi2 alloy target. Effect of sputtering input powers on characteristics of CoSi2 thin films was researched by X-ray diffraction (XRD), transparent electron microscope (TEM), energy dispersive X-ray analysis and four points probe, etc. It was shown that the deposition rate increased lineally, the selective sputtering of silicon was strengthened, the (111) texture increased, and the resistivity decreased when the input powers were increased.
Effect of sputtering input powers on CoSi2 thin films prepared by magnetron sputtering
Cheng, F.X. (Autor:in) / Jiang, C.H. (Autor:in) / Wu, J.S. (Autor:in)
02.06.2004
4 pages
Aufsatz (Zeitschrift)
Elektronische Ressource
Englisch
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