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Simulation of homogenization behavior of compacted bentonite containing technological voids using modified penalty-based contact model
Simulation of homogenization behavior of compacted bentonite containing technological voids using modified penalty-based contact model
Simulation of homogenization behavior of compacted bentonite containing technological voids using modified penalty-based contact model
Computers and Geotechnics
Deng, Rong-Sheng (Autor:in) / Chen, Bao (Autor:in) / Ye, Wei-Min (Autor:in) / Chen, Yong-Gui (Autor:in) / Wang, Qiong (Autor:in)
Computers and Geotechnics ; 177 ; 106894
01.01.2025
Aufsatz (Zeitschrift)
Elektronische Ressource
Englisch