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Magnetic properties and microstructure of TbCo/(SiNx/Co)n films
AbstractThe Tb32Co68/(SiNx/Co)n films (n=0–3) were prepared by magnetron sputtering. The magnetic anisotropy of all Tb32Co68/(SiNx/Co)n films are perpendicular to the film plane. It is found that the saturation magnetization (Ms) and perpendicular coercivity (Hc⊥) of the Tb32Co68/(SiNx/Co)3 film are 263emu/cm3 and 3592 Oe, respectively. This film appears to be a promising material as a heat-assisted magnetic recording (HAMR) medium. The cross-sectional high resolution transmission electron microscope (HRTEM) images show that the interface roughness between the (SiNx/Co)n layers and TbCo layer increases as n is increased. The rough surface provides more obstacles and pinning sites that hinder the motion of the domain walls at interface between the (SiNx/Co)n layers and TbCo layer. Therefore, the Hc⊥ values are profoundly influenced by the interface roughness.
Magnetic properties and microstructure of TbCo/(SiNx/Co)n films
AbstractThe Tb32Co68/(SiNx/Co)n films (n=0–3) were prepared by magnetron sputtering. The magnetic anisotropy of all Tb32Co68/(SiNx/Co)n films are perpendicular to the film plane. It is found that the saturation magnetization (Ms) and perpendicular coercivity (Hc⊥) of the Tb32Co68/(SiNx/Co)3 film are 263emu/cm3 and 3592 Oe, respectively. This film appears to be a promising material as a heat-assisted magnetic recording (HAMR) medium. The cross-sectional high resolution transmission electron microscope (HRTEM) images show that the interface roughness between the (SiNx/Co)n layers and TbCo layer increases as n is increased. The rough surface provides more obstacles and pinning sites that hinder the motion of the domain walls at interface between the (SiNx/Co)n layers and TbCo layer. Therefore, the Hc⊥ values are profoundly influenced by the interface roughness.
Magnetic properties and microstructure of TbCo/(SiNx/Co)n films
Lin, G.P. (Autor:in) / Kuo, P.C. (Autor:in) / Lin, P.L. (Autor:in) / Huang, K.T. (Autor:in) / Shen, C.L. (Autor:in) / Tsai, T.L. (Autor:in) / Ou, S.L. (Autor:in) / Chen, S.C. (Autor:in)
25.01.2009
3 pages
Aufsatz (Zeitschrift)
Elektronische Ressource
Englisch
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