Magnetic properties and microstructure of TbCo/(SiN<italic><inf>x</inf></italic>/Co)<italic><inf>n</inf></italic> films: Fid-Bau Portal

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Magnetic properties and microstructure of TbCo/(SiNx/Co)n films

Lin, G.P. / Kuo, P.C. / Lin, P.L. / Huang, K.T. / Shen, C.L. / Tsai, T.L. / Ou, S.L. / Chen, S.C.

AbstractThe Tb32Co68/(SiNx/Co)n films (n=0–3) were prepared by magnetron sputtering. The magnetic anisotropy of all Tb32Co68/(SiNx/Co)n films are perpendicular to the film plane. It is found that the saturation magnetization (Ms) and perpendicular coercivity (Hc⊥) of the Tb32Co68/(SiNx/Co)3 film are 263emu/cm³ and 3592 Oe, respectively. This film appears to be a promising material as a heat-assisted magnetic recording (HAMR) medium. The cross-sectional high resolution transmission electron microscope (HRTEM) images show that the interface roughness between the (SiNx/Co)n layers and TbCo layer increases as n is increased. The rough surface provides more obstacles and pinning sites that hinder the motion of the domain walls at interface between the (SiNx/Co)n layers and TbCo layer. Therefore, the Hc⊥ values are profoundly influenced by the interface roughness.

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Magnetic properties and microstructure of TbCo/(SiNx/Co)n films

Lin, G.P. / Kuo, P.C. / Lin, P.L. / Huang, K.T. / Shen, C.L. / Tsai, T.L. / Ou, S.L. / Chen, S.C.

AbstractThe Tb32Co68/(SiNx/Co)n films (n=0–3) were prepared by magnetron sputtering. The magnetic anisotropy of all Tb32Co68/(SiNx/Co)n films are perpendicular to the film plane. It is found that the saturation magnetization (Ms) and perpendicular coercivity (Hc⊥) of the Tb32Co68/(SiNx/Co)3 film are 263emu/cm³ and 3592 Oe, respectively. This film appears to be a promising material as a heat-assisted magnetic recording (HAMR) medium. The cross-sectional high resolution transmission electron microscope (HRTEM) images show that the interface roughness between the (SiNx/Co)n layers and TbCo layer increases as n is increased. The rough surface provides more obstacles and pinning sites that hinder the motion of the domain walls at interface between the (SiNx/Co)n layers and TbCo layer. Therefore, the Hc⊥ values are profoundly influenced by the interface roughness.

Magnetic properties and microstructure of TbCo/(SiNx/Co)n films

Lin, G.P. / Kuo, P.C. / Lin, P.L. / Huang, K.T. / Shen, C.L. / Tsai, T.L. / Ou, S.L. / Chen, S.C.

AbstractThe Tb32Co68/(SiNx/Co)n films (n=0–3) were prepared by magnetron sputtering. The magnetic anisotropy of all Tb32Co68/(SiNx/Co)n films are perpendicular to the film plane. It is found that the saturation magnetization (Ms) and perpendicular coercivity (Hc⊥) of the Tb32Co68/(SiNx/Co)3 film are 263emu/cm³ and 3592 Oe, respectively. This film appears to be a promising material as a heat-assisted magnetic recording (HAMR) medium. The cross-sectional high resolution transmission electron microscope (HRTEM) images show that the interface roughness between the (SiNx/Co)n layers and TbCo layer increases as n is increased. The rough surface provides more obstacles and pinning sites that hinder the motion of the domain walls at interface between the (SiNx/Co)n layers and TbCo layer. Therefore, the Hc⊥ values are profoundly influenced by the interface roughness.

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Title:

Magnetic properties and microstructure of TbCo/(SiNx/Co)n films

Contributors:

Lin, G.P. (author) / Kuo, P.C. (author) / Lin, P.L. (author) / Huang, K.T. (author) / Shen, C.L. (author) / Tsai, T.L. (author) / Ou, S.L. (author) / Chen, S.C. (author)

Publication date:

2009-01-25

Size:

3 pages

ISSN:

DOI:

https://doi.org/10.1016/j.matdes.2009.01.040

Type of media:

Article (Journal)

Type of material:

Electronic Resource

Language:

English

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