Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Preparation device and preparation method for widened self-supported silicon-oxygen-carbon thin film
The invention relates to a preparation device and a preparation method for a widened self-supported silicon-oxygen-carbon thin film and relates to silicon-oxygen-carbon thin films. The preparation device comprises a supporting system, a film weaving system, a roller forming system and a heating system, wherein the supporting system provides a bracket and a base for the film weaving system and the roller forming system; the film weaving system is provided with an ejector pin, a film spraying charging barrel and a mould jet plate; the roller forming system is provided with a transverse widener, a vertical widener and a winder; the heating system is provided with a film discharge plate, a heater, an insulating body, a furnace wall, a glass window, a pair of heat-proof gloves, a double-buret clamp, a handle, a thermocouple and a temperature controller. The preparation method comprises the following steps: by taking polycarbosilane as a precursor, firstly defoaming and fusing polycarbosilane in an inert gas atmosphere; then, exporting the fused polycarbosilane from a film outlet to an extruding forming device; in an environment of inert gas atmosphere protection and relatively high temperature, rolling many times with a roller to obtain a polycarbosilane original film with a relatively great width; and carrying out oxidizing crosslinking and high-temperature splitting sintering on the original film to obtain the widened self-supported silicon-oxygen-carbon thin film.
Preparation device and preparation method for widened self-supported silicon-oxygen-carbon thin film
The invention relates to a preparation device and a preparation method for a widened self-supported silicon-oxygen-carbon thin film and relates to silicon-oxygen-carbon thin films. The preparation device comprises a supporting system, a film weaving system, a roller forming system and a heating system, wherein the supporting system provides a bracket and a base for the film weaving system and the roller forming system; the film weaving system is provided with an ejector pin, a film spraying charging barrel and a mould jet plate; the roller forming system is provided with a transverse widener, a vertical widener and a winder; the heating system is provided with a film discharge plate, a heater, an insulating body, a furnace wall, a glass window, a pair of heat-proof gloves, a double-buret clamp, a handle, a thermocouple and a temperature controller. The preparation method comprises the following steps: by taking polycarbosilane as a precursor, firstly defoaming and fusing polycarbosilane in an inert gas atmosphere; then, exporting the fused polycarbosilane from a film outlet to an extruding forming device; in an environment of inert gas atmosphere protection and relatively high temperature, rolling many times with a roller to obtain a polycarbosilane original film with a relatively great width; and carrying out oxidizing crosslinking and high-temperature splitting sintering on the original film to obtain the widened self-supported silicon-oxygen-carbon thin film.
Preparation device and preparation method for widened self-supported silicon-oxygen-carbon thin film
YAO RONGQIAN (Autor:in) / XU XIAOHUI (Autor:in) / LIN QINGYUN (Autor:in) / YAN JINGYI (Autor:in) / FENG ZUDE (Autor:in)
08.04.2015
Patent
Elektronische Ressource
Englisch
IPC:
C04B
Kalk
,
LIME
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