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Bismuth-ferrite-based high-temperature piezoelectric and dielectric energy storage ceramic and preparation method thereof
The invention discloses a bismuth-ferrite-based high-temperature piezoelectric and high-energy-storage density lead-free dielectric ceramic material. The material comprises components which are expressed by a general formula of (1-u)BiFe1-xMexO3-uBaTi1-yZn1/3Nb2/3)yO3, wherein Me is one or two of trivalent metallic elements Al, Ga, Y, Sc, Cr and Co; x, y and u represent mole fractions; x is greater than or equal to 0.01 and less than or equal to 0.4; y is greater than or equal to 0.01 and less than or equal to 0.3; u is greater than or equal to 0.1 and less than or equal to 0.5. With combination of a stepwise synthesis method and a microwave sintering method, the uniform and compact ceramic with controllable component structure gradient is produced; the ceramic is excellent in energy storage density, high piezoelectric constant and high Curie temperature; the energy storage density can reach 0.9J/cm<3>; the piezoelectric constant d33 can reach 236pm/V; the strain can reach 0.19%; the Curie temperature can reach 452 DEG C; the ceramic is low in strain hysteresis and high in practicability.
Bismuth-ferrite-based high-temperature piezoelectric and dielectric energy storage ceramic and preparation method thereof
The invention discloses a bismuth-ferrite-based high-temperature piezoelectric and high-energy-storage density lead-free dielectric ceramic material. The material comprises components which are expressed by a general formula of (1-u)BiFe1-xMexO3-uBaTi1-yZn1/3Nb2/3)yO3, wherein Me is one or two of trivalent metallic elements Al, Ga, Y, Sc, Cr and Co; x, y and u represent mole fractions; x is greater than or equal to 0.01 and less than or equal to 0.4; y is greater than or equal to 0.01 and less than or equal to 0.3; u is greater than or equal to 0.1 and less than or equal to 0.5. With combination of a stepwise synthesis method and a microwave sintering method, the uniform and compact ceramic with controllable component structure gradient is produced; the ceramic is excellent in energy storage density, high piezoelectric constant and high Curie temperature; the energy storage density can reach 0.9J/cm<3>; the piezoelectric constant d33 can reach 236pm/V; the strain can reach 0.19%; the Curie temperature can reach 452 DEG C; the ceramic is low in strain hysteresis and high in practicability.
Bismuth-ferrite-based high-temperature piezoelectric and dielectric energy storage ceramic and preparation method thereof
ZHOU CHANGRONG (Autor:in) / LI QINGNING (Autor:in) / XU JIWEN (Autor:in) / YUAN CHANGLAI (Autor:in) / ZENG WEIDONG (Autor:in) / CHEN GUOHUA (Autor:in)
27.05.2015
Patent
Elektronische Ressource
Englisch
IPC:
C04B
Kalk
,
LIME
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