A platform for research: civil engineering, architecture and urbanism
A platform for research: civil engineering, architecture and urbanism
Bismuth-ferrite-based high-temperature piezoelectric and dielectric energy storage ceramic and preparation method thereof
The invention discloses a bismuth-ferrite-based high-temperature piezoelectric and high-energy-storage density lead-free dielectric ceramic material. The material comprises components which are expressed by a general formula of (1-u)BiFe1-xMexO3-uBaTi1-yZn1/3Nb2/3)yO3, wherein Me is one or two of trivalent metallic elements Al, Ga, Y, Sc, Cr and Co; x, y and u represent mole fractions; x is greater than or equal to 0.01 and less than or equal to 0.4; y is greater than or equal to 0.01 and less than or equal to 0.3; u is greater than or equal to 0.1 and less than or equal to 0.5. With combination of a stepwise synthesis method and a microwave sintering method, the uniform and compact ceramic with controllable component structure gradient is produced; the ceramic is excellent in energy storage density, high piezoelectric constant and high Curie temperature; the energy storage density can reach 0.9J/cm<3>; the piezoelectric constant d33 can reach 236pm/V; the strain can reach 0.19%; the Curie temperature can reach 452 DEG C; the ceramic is low in strain hysteresis and high in practicability.
Bismuth-ferrite-based high-temperature piezoelectric and dielectric energy storage ceramic and preparation method thereof
The invention discloses a bismuth-ferrite-based high-temperature piezoelectric and high-energy-storage density lead-free dielectric ceramic material. The material comprises components which are expressed by a general formula of (1-u)BiFe1-xMexO3-uBaTi1-yZn1/3Nb2/3)yO3, wherein Me is one or two of trivalent metallic elements Al, Ga, Y, Sc, Cr and Co; x, y and u represent mole fractions; x is greater than or equal to 0.01 and less than or equal to 0.4; y is greater than or equal to 0.01 and less than or equal to 0.3; u is greater than or equal to 0.1 and less than or equal to 0.5. With combination of a stepwise synthesis method and a microwave sintering method, the uniform and compact ceramic with controllable component structure gradient is produced; the ceramic is excellent in energy storage density, high piezoelectric constant and high Curie temperature; the energy storage density can reach 0.9J/cm<3>; the piezoelectric constant d33 can reach 236pm/V; the strain can reach 0.19%; the Curie temperature can reach 452 DEG C; the ceramic is low in strain hysteresis and high in practicability.
Bismuth-ferrite-based high-temperature piezoelectric and dielectric energy storage ceramic and preparation method thereof
ZHOU CHANGRONG (author) / LI QINGNING (author) / XU JIWEN (author) / YUAN CHANGLAI (author) / ZENG WEIDONG (author) / CHEN GUOHUA (author)
2015-05-27
Patent
Electronic Resource
English
IPC:
C04B
Kalk
,
LIME
Bismuth ferrite-based high-temperature piezoelectric ceramic material and preparation method thereof
| European Patent Office | 2024
High-strain bismuth ferrite-based leadless piezoelectric ceramic and preparation method thereof
| European Patent Office | 2024
| European Patent Office | 2020
Bismuth ferrite-based leadless piezoelectric ceramic material and preparation method thereof
| European Patent Office | 2023
| European Patent Office | 2020