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Method for growing (100) preferred orientation sodium bismuth titanate-based thin film on silicon chip
The invention belongs to the field of electric functional materials, and particularly relates to a method for growing a (100) preferred orientation sodium bismuth titanate-based thin film on a silicon chip. The general formula of the series of thin films is Na0.5Bi0.5Ti1-yXyO3-delta, wherein X is doping element; y is the doping amount of the doping element; delta is the number of lost oxygen atoms for maintaining charge balance. According to the method provided by the invention, an optimized chemical solution deposition preparation technology is adopted, sodium bismuth titanate-based thin films having (100) preferred orientation are prepared on the silicon chip. The whole preparation technology process is simple and easy to control, the cost is low, the crystalline phase of the prepared thin film is single, and the degree of preferred orientation is high.
Method for growing (100) preferred orientation sodium bismuth titanate-based thin film on silicon chip
The invention belongs to the field of electric functional materials, and particularly relates to a method for growing a (100) preferred orientation sodium bismuth titanate-based thin film on a silicon chip. The general formula of the series of thin films is Na0.5Bi0.5Ti1-yXyO3-delta, wherein X is doping element; y is the doping amount of the doping element; delta is the number of lost oxygen atoms for maintaining charge balance. According to the method provided by the invention, an optimized chemical solution deposition preparation technology is adopted, sodium bismuth titanate-based thin films having (100) preferred orientation are prepared on the silicon chip. The whole preparation technology process is simple and easy to control, the cost is low, the crystalline phase of the prepared thin film is single, and the degree of preferred orientation is high.
Method for growing (100) preferred orientation sodium bismuth titanate-based thin film on silicon chip
YANG CHANGHONG (Autor:in) / FENG CHAO (Autor:in) / LI SHUXIN (Autor:in) / HAN YAJIE (Autor:in) / HU XUEQING (Autor:in) / JIAO FANGYING (Autor:in) / QIAN JIN (Autor:in) / DU XIONGBIN (Autor:in)
19.08.2015
Patent
Elektronische Ressource
Englisch
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