Bix (Bi0.5Na0.4K0.1) 1-xTi1-xMexO3 lead-free antiferroelectric high energy density ceramic and preparation method thereof: Fid-Bau Portal

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Bix (Bi0.5Na0.4K0.1) 1-xTi1-xMexO3 lead-free antiferroelectric high energy density ceramic and preparation method thereof

YUAN CHANGLAI / ZHOU XINGXING / FENG QIN / LIU XIAO / ZHOU CHANGRONG / YANG TAO / XU JIWEN / LI QINGNING / CHEN GUOHUA

The invention relates to a Bix (Bi0.5Na0.4K0.1) 1-xTi1-xMexO3 lead-free antiferroelectric high energy density ceramic and a preparation method thereof. Me is one of Al<3+>, Co<3+>, Cr<3+>, (Zn0.5Ti0.5) <3+>, (Mg0.5Ti0.5) <3+>, (Ni0.5Ti0.5) <3+>, and x satisfies the relation of 0.1<=x<=0.3. First a conventional synthesis technology is used to synthesize a Bix (Bi0.5Na0.4K0.1)1-x Ti1-xMexO3 powder; then a two-step technology is used to prepare Bix(Bi0.5Na0.4K0.1) 1-x Ti1-x MexO3 lead-free antiferroelectric high energy density ceramic. The high energy density ceramic prepared by the invention has energy density of 0.7-1.8 J/cm<3>, and the energy density is adjustable based on component and technology.

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Bix (Bi0.5Na0.4K0.1) 1-xTi1-xMexO3 lead-free antiferroelectric high energy density ceramic and preparation method thereof

YUAN CHANGLAI / ZHOU XINGXING / FENG QIN / LIU XIAO / ZHOU CHANGRONG / YANG TAO / XU JIWEN / LI QINGNING / CHEN GUOHUA

The invention relates to a Bix (Bi0.5Na0.4K0.1) 1-xTi1-xMexO3 lead-free antiferroelectric high energy density ceramic and a preparation method thereof. Me is one of Al<3+>, Co<3+>, Cr<3+>, (Zn0.5Ti0.5) <3+>, (Mg0.5Ti0.5) <3+>, (Ni0.5Ti0.5) <3+>, and x satisfies the relation of 0.1<=x<=0.3. First a conventional synthesis technology is used to synthesize a Bix (Bi0.5Na0.4K0.1)1-x Ti1-xMexO3 powder; then a two-step technology is used to prepare Bix(Bi0.5Na0.4K0.1) 1-x Ti1-x MexO3 lead-free antiferroelectric high energy density ceramic. The high energy density ceramic prepared by the invention has energy density of 0.7-1.8 J/cm<3>, and the energy density is adjustable based on component and technology.

Bix (Bi0.5Na0.4K0.1) 1-xTi1-xMexO3 lead-free antiferroelectric high energy density ceramic and preparation method thereof

YUAN CHANGLAI / ZHOU XINGXING / FENG QIN / LIU XIAO / ZHOU CHANGRONG / YANG TAO / XU JIWEN / LI QINGNING / CHEN GUOHUA

The invention relates to a Bix (Bi0.5Na0.4K0.1) 1-xTi1-xMexO3 lead-free antiferroelectric high energy density ceramic and a preparation method thereof. Me is one of Al<3+>, Co<3+>, Cr<3+>, (Zn0.5Ti0.5) <3+>, (Mg0.5Ti0.5) <3+>, (Ni0.5Ti0.5) <3+>, and x satisfies the relation of 0.1<=x<=0.3. First a conventional synthesis technology is used to synthesize a Bix (Bi0.5Na0.4K0.1)1-x Ti1-xMexO3 powder; then a two-step technology is used to prepare Bix(Bi0.5Na0.4K0.1) 1-x Ti1-x MexO3 lead-free antiferroelectric high energy density ceramic. The high energy density ceramic prepared by the invention has energy density of 0.7-1.8 J/cm<3>, and the energy density is adjustable based on component and technology.

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Titel:

Bix (Bi0.5Na0.4K0.1) 1-xTi1-xMexO3 lead-free antiferroelectric high energy density ceramic and preparation method thereof

Beteiligte:

YUAN CHANGLAI (Autor:in) / ZHOU XINGXING (Autor:in) / FENG QIN (Autor:in) / LIU XIAO (Autor:in) / ZHOU CHANGRONG (Autor:in) / YANG TAO (Autor:in) / XU JIWEN (Autor:in) / LI QINGNING (Autor:in) / CHEN GUOHUA (Autor:in)

Erscheinungsdatum:

09.09.2015

Medientyp:

Patent

Format:

Elektronische Ressource

Sprache:

Englisch

Klassifikation:

IPC: C04B Kalk , LIME

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