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Patterning method of graphene-based transparent conducting film
The invention discloses a patterning method of a graphene-based transparent conducting film, which comprises the following steps: providing a transparent conducting film, wherein the transparent conducting film comprises a substrate and a transparent conducting layer mainly composed of graphene; covering the transparent conducting layer with a mask in a hollow pattern structure; and putting the transparent conducting film into an etching chamber, introducing working gas, generating plasma which can react with the graphene to generate a gaseous product without damaging the substrate and mask, and completely removing the partial transparent conducting layer region exposed from the hollow pattern structure of the mask by using the plasma, wherein the rest region covered by the mask on the transparent conducting layer is reserved. The method has the advantages of simple technique, low cost, high efficiency and high yield, and can complete one-step mass patterning treatment on the graphene-based transparent conducting film. The obtained transparent conducting film has favorable and stable optical and electric properties, and is suitable to be widely used in various optical and electric devices.
Patterning method of graphene-based transparent conducting film
The invention discloses a patterning method of a graphene-based transparent conducting film, which comprises the following steps: providing a transparent conducting film, wherein the transparent conducting film comprises a substrate and a transparent conducting layer mainly composed of graphene; covering the transparent conducting layer with a mask in a hollow pattern structure; and putting the transparent conducting film into an etching chamber, introducing working gas, generating plasma which can react with the graphene to generate a gaseous product without damaging the substrate and mask, and completely removing the partial transparent conducting layer region exposed from the hollow pattern structure of the mask by using the plasma, wherein the rest region covered by the mask on the transparent conducting layer is reserved. The method has the advantages of simple technique, low cost, high efficiency and high yield, and can complete one-step mass patterning treatment on the graphene-based transparent conducting film. The obtained transparent conducting film has favorable and stable optical and electric properties, and is suitable to be widely used in various optical and electric devices.
Patterning method of graphene-based transparent conducting film
CHEN XINJIANG (Autor:in)
30.09.2015
Patent
Elektronische Ressource
Englisch
IPC:
C04B
Kalk
,
LIME
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