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Low-temperature sintering low loss microwave dielectric ceramic material
The present invention discloses a low-temperature sintering low loss microwave dielectric ceramic material, which has a chemical formula of (Zn0.97Co0.3)3Nb2O8+3.5wt%BaCu(B2O5). The preparation method comprises: using ZnO, CoO and Nb2O5 to prepare a powder material A according to (Zn0.97Co0.3)3Nb2O8; using BaCO3, CuO and H3BO3 to prepare a powder material B according to BaCu(B2O5), and respectively carrying out ball milling; drying at a temperature of 100-120 DEG C, and screening with a 40 mesh sieve; pre-firing the powder material A at a temperature of 900-1100 DEG C, and pre-firing the powder material B at a temperature of 700-850 DEG C; mixing the pre-fired powder material A and the pre-fired powder material B according to a stoichiometric formula of (Zn0.97Co0.3)3Nb2O8+3.5wt%BaCu(B2O5), carrying out ball milling, screening, and carrying out machine pressing to prepare a green body; and sintering the green body at a temperature of 800-950 DEG C to prepare the microwave dielectric ceramic. According to the present invention, the dielectric constant [epsilon]r is 20.13-22.45, the quality factor Q*f is 65360-85352 GHz, and the resonant frequency temperature coefficient [tau]f is -71.05- -62.87*10<-6>/DEG C; and the preparation simple process, and the time and the energy source cost are saved.
Low-temperature sintering low loss microwave dielectric ceramic material
The present invention discloses a low-temperature sintering low loss microwave dielectric ceramic material, which has a chemical formula of (Zn0.97Co0.3)3Nb2O8+3.5wt%BaCu(B2O5). The preparation method comprises: using ZnO, CoO and Nb2O5 to prepare a powder material A according to (Zn0.97Co0.3)3Nb2O8; using BaCO3, CuO and H3BO3 to prepare a powder material B according to BaCu(B2O5), and respectively carrying out ball milling; drying at a temperature of 100-120 DEG C, and screening with a 40 mesh sieve; pre-firing the powder material A at a temperature of 900-1100 DEG C, and pre-firing the powder material B at a temperature of 700-850 DEG C; mixing the pre-fired powder material A and the pre-fired powder material B according to a stoichiometric formula of (Zn0.97Co0.3)3Nb2O8+3.5wt%BaCu(B2O5), carrying out ball milling, screening, and carrying out machine pressing to prepare a green body; and sintering the green body at a temperature of 800-950 DEG C to prepare the microwave dielectric ceramic. According to the present invention, the dielectric constant [epsilon]r is 20.13-22.45, the quality factor Q*f is 65360-85352 GHz, and the resonant frequency temperature coefficient [tau]f is -71.05- -62.87*10<-6>/DEG C; and the preparation simple process, and the time and the energy source cost are saved.
Low-temperature sintering low loss microwave dielectric ceramic material
LI LINGXIA (Autor:in) / SUN HAO (Autor:in) / LYU XIAOSONG (Autor:in) / LI SAI (Autor:in)
18.11.2015
Patent
Elektronische Ressource
Englisch
IPC:
C04B
Kalk
,
LIME
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